Line Length Effect on Electromigration Characteristics of Eutectic SnPb Solder
نویسندگان
چکیده
منابع مشابه
The Effect of Electromigration on Eutectic SnPb and Pb-free Solders in Wafer Level-Chip Scale Packages
Introduction Reliability is an ongoing, crucial part of the microelectronics industry as companies continue to increase the population of I/O connections and shrink package dimensions. As outlined in the International Technology Roadmap for Semiconductors (ITRS), this trend causes increased current density in solder joints, making electromigration the limiting reliability factor in high density...
متن کاملElectromigration in Solder Joints and Solder Lines
Au (0.05 μm) 69.4 μm Electromigration may affect the reliability of flip-chip solder joints. Eutectic solder is a two-phase alloy, so its electromigration behavior is different from that in aluminum or copper interconnects. In addition, a flipchip solder joint has a built-in currentcrowding configuration to enhance electromigration failure. To better understand electromigration in SnPb and lead...
متن کاملMeasurement of electromigration activation energy in eutectic SnPb and SnAg flip-chip solder joints with Cu and Ni under-bump metallization
Electromigration activation energy is measured by a built-in sensor that detects the real temperature during current stressing. Activation energy can be accurately determined by calibrating the temperature using the temperature coefficient of resistivity of an Al trace. The activation energies for eutectic SnAg and SnPb solder bumps are measured on Cu under-bump metallization (UBM) as 1.06 and ...
متن کاملMean Time To Failure in Wafer Level-CSP Packages with SnPb and SnAgCu Solder Bumps
In this test setup, embedded die surface temperature sensors are used to assess device electromigration performance using a high precision, high density, resistance measurement system. Solder bump failures are found to result from voiding at the UBM/solder interface where CuSn intermetallic formation and vacancy pileup are observed. The driving mechanisms for electromigration induced voiding ar...
متن کاملElectromigration Performance of Wlcsp Solder Joints
Wafer Level Chip Scale Package (WLCSP) assemblies were tested under high temperature and high current conditions. Electromigration damage was observed along with accelerated diffusion and intermetallic compound growth at the solder / Under Bump Metallization (UBM) interface. Final electrical failure typically occurred due to a void created in the redistribution line (RDL) near the UBM. The fail...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2007
ISSN: 1225-0562
DOI: 10.3740/mrsk.2007.17.7.371